2SK2691-01R n-channel mos-fet fap-iiib series 60v 0,01w 70a 100w > features > outline drawing - high current - low on-resistance - no secondary breakdown - low driving power - avalanche rated > applications - motor control - general purpose power amplifier - dc-dc converters > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings (t c =25c), unless otherwise specified item symbol rating unit drain-source-voltage v ds 60 v continous drain current i d 70 a pulsed drain current i d(puls) 280 a gate-source-voltage v gs 20 v maximum avalanche energy e av 685 mj* max. power dissipation p d 100 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c * l=0,186mh, v cc =24v - electrical characteristics (t c =25c), unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage v (br)dss i d =1ma v gs =0v 60 v gate threshhold voltage v gs(th) i d =1m a v ds= v gs 1,0 1,5 2,0 v zero gate voltage drain current i dss v ds =60v t ch =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current i gss v gs =20v v ds =0v 10 100 na drain source on-state resistance r ds(on) i d =40a v gs =4v 0,012 0,017 w v gs =10v 0,0075 0,01 w forward transconductance g fs i d =40a v ds =25v 25 55 s input capacitance c iss v ds =25v 3500 5250 pf output capacitance c oss v gs =0v 1250 1870 pf reverse transfer capacitance c rss f=1mhz 360 540 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =30v 15 23 ns t r i d =75a 75 120 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) v gs =10v 190 285 ns t f r gs =10 w 110 165 ns avalanche capability i av l = 100h t ch =25c 70 a diode forward on-voltage v sd i f =160a v gs =0v t ch =25c 1,15 1,65 v reverse recovery time t rr i f =80a v gs =0v 75 120 ns reverse recovery charge q rr -di f /d t =100a/s t ch =25c 0,17 c - thermal characteristics item symbol test conditions min. typ. max. unit thermal resistance r th(ch-a) channel to air 30 c/w r th(ch-c) channel to case 1,25 c/w collmer semiconductor - p.o. box 702708 - dallas tx - 75370 - 972.233.1589 - 972.233.0481 fax - www.collmer.com - 11/98
n-channel mos-fet 2SK2691-01R 60v 0,01w 70a 100w fap-iiib series > characteristics typical output characteristics drain-source on-state resistance vs. t ch typical transfer characteristics - i d =f(v ds ); 80s pulse test; t c =25c - r ds(on) = f(t ch ); i d =40a; v gs =10v - i d =f(v gs ); 80s pulse test; v ds =25v; t ch =25c i d [a] 1 r ds(on) [m w ] 2 i d [a] 3 v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source on-state-resistance vs. i d typical forward transconductance vs. i d gate threshold voltage vs. t ch - r ds(on) =f(i d ); 80s pulse test; t c =25c - g fs =f(i d ); 80s pulse test; v ds =25v; t ch =25c - v gs(th) =f(t ch ); i d =1ma; v ds =v gs r ds(on) [m w ] 4 g fs [s] 5 v gs(th) [v] 6 i d [a] ? i d [a] ? t ch [c] ? typical capacitances vs. v ds typical gate charge characteristic forward characteristics of reverse diode - c=f(v ds ); v gs =0v; f=1mhz - v gs =f(qg); i d =80a; t c =25c - - i f =f(v sd ); 80s pulse test; t ch =25c c [f] 7 v ds [v] 8 v gs [v] i f [a] 9 v ds [v] ? qg [nc] ? v sd [v] ? maximum avalanche energy vs. starting t ch safe operation area e av =f(starting t ch ): v cc =24v; i av 70a i d =f(v ds ): d=0,01, tc=25c - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 z thch =f(t) parameter:d=t/t e av [mj] i d [a] starting t ch [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
n-channel mos-fet 2SK2691-01R 60v 0,01w 70a 100w fap-iiib series > characteristics this specification is subject to change without notice! power dissipation p d =f(t c ) 0 25 50 75 100 125 0 25 50 75 100 125 150 t c [c] p d / p dmax [%] maximum avalanche current vs. starting t ch i av =f(starting t ch ) 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 starting t ch [c] i av / i avmax [%]
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